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1/11 january 2001 stp3nc90z - stp3nc90zfp STB3NC90Z-1 n-channel 900v - 3.2 w - 3.5a to-220/to-220fp/i2pak zener-protected powermesh?iii mosfet n typical r ds (on) = 3.2 w n extremely high dv/dt and capability gate to - source zener diodes n 100% avalanche tested n very low gate input resistance n gate charge minimized description the third generation of mesh overlay ? power mosfets for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back zener diodes between gate and source. such ar- rangement gives extra esd capability with higher rug- gedness performance as requested by a large variety of single-switch applications. applications n single-ended smps in monitors, computer and industrial application n welding equipment absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d stp3nc90z/fp 900v < 3.5 w 3.5 a STB3NC90Z-1 900v < 3.5 w 3.5 a symbol parameter value unit stp(b)3nc90z(-1) stp3nc90zfp v ds drain-source voltage (v gs = 0) 900 v v dgr drain-gate voltage (r gs = 20 k w ) 900 v v gs gate- source voltage 25 v i d drain current (continuos) at t c = 25c 3.5 3.5(*) a i d drain current (continuos) at t c = 100c 2.2 2.2(*) a i dm ( l ) drain current (pulsed) 14 14 a p tot total dissipation at t c = 25c 100 35 w derating factor 0.8 0.28 w/c i gs gate-source current (*) 50 ma v esd(g-s) gate source esd(hbm-c=100pf, r=15k w) 2.5 kv dv/dt peak diode recovery voltage slope 3 v/ns v iso insulation withstand voltage (dc) -- 2000 v t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c (1)i sd 3.5a, di/dt 100a/s, v dd v (br)dss , t j t jmax (*) . limited only by maximum temperature allowed to-220 1 2 3 to-220fp 1 2 3 i2pak (tabless to-220)
stp3nc90z/fp/STB3NC90Z-1 2/11 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-220 / i2pak to-220fp rthj-case thermal resistance junction-case max 1.25 3.57 c/w rthj-amb thermal resistance junction-ambient max 62 c/w rthc-sink thermal resistance case-sink typ 0.1 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 3.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 220 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 900 v d bv dss / d t j breakdown voltage temp. coefficient i d = 1 ma, v gs = 0 1 v/c i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 1.75 a 3.2 3.5 w i d(on) on state drain current v ds > i d(on) x r ds(on)max, v gs =10v 3.5 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 1.75a 3s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1250 pf c oss output capacitance 78 pf c rss reverse transfer capacitance 7pf
3/11 stp3nc90z/fp/STB3NC90Z-1 electrical characteristics (continued) switching on switching off source drain diode gate-source zener diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. d v bv = a t (25-t) bv gso (25) protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the devices esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the 25v zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the devices integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time rise time v dd = 450 v, i d = 1.5 a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 28 ns t r 14 ns q g total gate charge v dd = 720v, i d = 3a, v gs = 10v 27 38 nc q gs gate-source charge 8 nc q gd gate-drain charge 10 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 720v, i d = 3 a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 16 ns t f fall time 10 ns t c cross-over time 18 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 3.5 a i sdm (2) source-drain current (pulsed) 14 a v sd (1) forward on voltage i sd = 3 a, v gs = 0 1.6 v t rr reverse recovery time i sd = 3 a, di/dt = 100a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 712 ns q rr reverse recovery charge 4450 c i rrm reverse recovery current 13 a symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 25 v a t voltage thermal coefficient t=25c note(3) 1.3 10 -4 /c rz dynamic resistance i d = 50 ma 90 w
stp3nc90z/fp/STB3NC90Z-1 4/11 output characteristics safe operating area for to-220fp safe operating area for to-220 / i2pak thermal impedance for to-220 / i2pak thermal impedance for to-220fp transfer characteristics
5/11 stp3nc90z/fp/STB3NC90Z-1 normalized gate threshold voltage vs temp. normalized on resistance vs temperature gate charge vs gate-source voltage capacitance variations static drain-source on resistance transconductance
stp3nc90z/fp/STB3NC90Z-1 6/11 source-drain diode forward characteristics
7/11 stp3nc90z/fp/STB3NC90Z-1 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
stp3nc90z/fp/STB3NC90Z-1 8/11 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
9/11 stp3nc90z/fp/STB3NC90Z-1 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
stp3nc90z/fp/STB3NC90Z-1 10/11 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
11/11 stp3nc90z/fp/STB3NC90Z-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com

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